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| BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN 3 2 1 s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value BDW83C BDW84C 100 100 5 15 40 0.5 130 -65 to 150 150 Unit V V V A A A W o C o C 1/4 BDW83C / BDW84C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.96 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CB = 100 V V CE = 40 V V EB = 5 V I C = 30 mA IC = 6 A I C = 15 A IC = 6 A IC = 6 A I C = 15 A I F = 10 A V CC = 30 V I C = 10 A R B1 = 300 R B2 = 150 I B1 = - I B2 = 40 mA 0.9 6 I B = 12 mA I B = 150 mA V CE = 3 A V CE =3 V V CE =3 V 750 100 100 2.5 4 2.5 20000 4 V s s T case = 150 C o Min. Typ. Max. 500 5 1 2 Unit A mA mA mA V V V V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(on) h FE Vf* t on t off Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Diode Forward Voltage Turn-on Time Turn-off Time Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 BDW83C / BDW84C TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A G 3/4 BDW83C / BDW84C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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